PART |
Description |
Maker |
LT3080 LT3080-1 LT1764A LT3007 LT3008 LT3020 LT302 |
3μA IQ, 20mA, 45V Low Dropout Fault Tolerant Linear Regulators Output Current: 20mA
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Linear Technology
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TLSU1002AT02 TLGU1002AT02 TLPGU1002AT02 EA09751 TL |
TOSHIBA LED lamp. Color amber. Peak emission wavelength(typ) @20mA 596 nm. Luminous intensity @20mA 8.5(min), 30(typ) mcd. TOSHIBA LED lamp. Color yellow. Peak emission wavelength(typ) @20mA 590 nm. Luminous intensity @20mA 8.5(min), 30(typ) mcd. LED LAMP PANEL CIRCUIT INDICATOR From old datasheet system TOSHIBA LED lamp. Color pure-green. Peak emission wavelength(typ) @20mA 562 nm. Luminous intensity @20mA 1.53(min), 6(typ) mcd. TOSHIBA LED lamp. Color green. Peak emission wavelength(typ) @20mA 574 nm. Luminous intensity @20mA 8.5(min), 30(typ) mcd.
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TOSHIBA[Toshiba Semiconductor] Marktech Optoelectronics
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NPT-USS-AE NPT-USS NPT-USS-AD NPT-USS-ADE NPT-USS- |
SPNovaLED InGaN True Green :1 Watt
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DOMINANT[DOMINANT Semiconductors]
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LT3009IDC-1.2-PBF LT3009IDC-1.2-TRPBF LT3009IDC-1. |
3楼矛A IQ, 20mA Low Dropout Linear Regulators 3渭A IQ, 20mA Low Dropout Linear Regulators 3μA IQ, 20mA Low Dropout Linear Regulators
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Linear Technology
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1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V. High speed high conductance diode. Working inverse voltage 175 V. General purpose low diode. Working inverse voltage 100V. 500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA). General purpose low diode. Working inverse voltage 200V. General Purpose Diodes
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Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor] http://
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LT3008 LT3008EDC LT3008EDC-PBF LT3008EDC-TR LT3008 |
3μA IQ, 20mA, 45V Low Dropout Linear Regulator 3渭A IQ, 20mA, 45V Low Dropout Linear Regulator 3楼矛A IQ, 20mA, 45V Low Dropout Linear Regulator
|
Linear Technology
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CY7C1339F-100BGI CY7C1339F CY7C1339F-133AI CY7C133 |
DIODE ZENER SINGLE 200mW 3.9Vz 20mA-Izt 0.05 10uA-Ir 1 SOT-323 3K/REEL 128K X 32 CACHE SRAM, 2.6 ns, PQFP100 DIODE ZENER SINGLE 200mW 4.3Vz 20mA-Izt 0.05 5uA-Ir 1 SOT-323 3K/REEL 128K X 32 CACHE SRAM, 2.6 ns, PBGA119 4-Mbit (128K x 32) Pipelined Sync SRAM 128K X 32 CACHE SRAM, 4 ns, PBGA119 DIODE ZENER DUAL ISOLATED 200mW 3.9Vz 20mA-Izt 0.05 10uA-Ir 1 SOT-363 3K/REEL 128K X 32 CACHE SRAM, 2.8 ns, PQFP100 DIODE ZENER TRIPLE ISOLATED 200mW 4.3Vz 20mA-Izt 0.05 5uA-Ir 1 SOT-363 3K/REEL 128K X 32 CACHE SRAM, 2.6 ns, PQFP100 DIODE ZENER SINGLE 150mW 4.3Vz 20mA-Izt 0.05 5uA-Ir 1 SOT-523 3K/REEL 128K X 32 CACHE SRAM, 2.6 ns, PQFP100 DIODE ZENER SINGLE 150mW 3.3Vz 20mA-Izt 0.05 25uA-Ir 1 SOT-523 3K/REEL DIODE ZENER TRIPLE ISOLATED 200mW 3.3Vz 20mA-Izt 0.05 25uA-Ir 1 SOT-363 3K/REEL DIODE ZENER SINGLE 350mW 3.9Vz 20mA-Izt 0.05 10uA-Ir 1 SOT-23 3K/REEL DIODE ZENER DUAL ISOLATED 200mW 3.6Vz 20mA-Izt 0.05 15uA-Ir 1 SOT-363 3K/REEL
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
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LT3008ITS8-5TRPBF LT3008EDC-1.2TR LT3008EDC-1.2TRP |
3楼矛A IQ, 20mA, 45V Low Dropout Linear Regulators 3μA IQ, 20mA, 45V Low Dropout Linear Regulators
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Linear Technology http://
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Z8937320ASC Z8937320VSC Z8937320FSC Z8927320VSC Z8 |
16-BIT, 20 MHz, OTHER DSP, PQCC44 Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:20mA; Current, It av:16A; Gate Trigger Current Max, Igt:20mA; Holding Current:35mA RoHS Compliant: Yes 16-BIT DIGITAL SIGNAL PROCESSORS WITH A/D CONVERTER
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ZILOG INC Zilog, Inc.
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2SA921 2SA09212SA921 2SA0921S 2SA921R |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | TO-92 晶体管|晶体管|进步党| 120伏特五(巴西)总裁| 20mA的一(c)|2 TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | TO-92 晶体管|晶体管|进步党| 120伏特五(巴西)总裁| 20mA的一(c)|92 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
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TE Connectivity, Ltd. Infineon Technologies AG Matsshita / Panasonic
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HAL508UA-A HAL523SF-A HAL523SF-K HAL516SF-A HAL516 |
MAGNETIC FIELD SENSOR-HALL EFFECT, -2.3-2.3mT, 0-20mA, RECTANGULAR, THROUGH HOLE MOUNT MAGNETIC FIELD SENSOR-HALL EFFECT, 20.7-13.5mT, 0-20mA, RECTANGULAR, THROUGH HOLE MOUNT PLASTIC, TO-92UA-1, 3 PIN Hall-Effect Sensor Family
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Micronas Semiconductor Holding AG
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